http:// www.sirectsemi.com n-channel enhancement mode field effect transistor - 90amp 80vol t application -servomotor control -power mosfet gate drivers -other switching applications feature -small surface mounting type -high density cell design for low r ds(on) -suitable for high packing density -rugged and reliable -high saturation current capability -voltage controlled small signal switch construction -n-channel enhancement absolute maximum ratings parameter symbol PS90N80 unit drain-source voltage v ds >80 v gate-source voltage v gs 20 v i d 90 drain current-continuos @ t a = 125 o c (note 1) -pulsed (note 2) i dm 300 a drain-source diode forward current i s 60 a maximum power dissipation p d 220 w operting junction and storage temperature range t j , t stg -55 to +175 o c thermal resistance, junction-to-ambient r ja 50 o c/w note: 1.surface mounted on fr-4 board, t Q 2% june 2009 / rev.6.4 2.pulse test : 380 s pulse width, 2% duty cycle circuit g s d e l e c t r o n i c PS90N80
http:// www.sirectsemi.com electrical characteristics parameter symbol conditions min. typ. max. unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = -250 a 75 - - v zero gate voltage drain current i dss v ds = 20v, v gs = 0v - - 20 a gate-body leakage i gss v gs = 16v, v ds = 0v - - 100 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = -250 a 2 - 4 v ststic drain-source on-resistance r ds(on) v gs = 10v, i d = 40a - 7.5 11 m ? forward transconductance g fs v ds = 25v, i d = 30a - 50 - s switching characterstics total gate charge q g - 90 140 gate-source charge q gs - 20 35 gate-drain charge q gd v ds = 60v, i d = 48a v gs = 10v, r gen = 4.7 ? - 30 45 nc turn-on delay time t d(on) - 12 - rise time t r - 79 - ns turn-off delay times t d(off) - 80 - fall time t f v dd = 38v, i d = 48a v gen = 10v, r l = 10 ? r gen = 4.7 ? - 52 - ns dynamic characteristics input capacitance c iss - 3300 - output capacitance c oss - 530 - reverse transfer capacitance c rss v ds = 25v, v gs = 0v f = 1.0mhz - 80 - pf drain-source diode characteristics diode forward voltage v sd v gs = 0v, i s = 60a - 1.5 - v PS90N80
http:// www.sirectsemi.com 0 50 150 200 100 30 20 10 0 250 v ge = 10v figure 1. output characteristics v ds , drain-to-source voltage (v) i d , drain current (a) 5v 4v 6v 7v 8v 9v 0 50 150 200 100 6 4 2 0 250 v gs = 10v figure 2. transfer characteristics v gs , gate-to-source voltage (v) i d , drain current (a) 8 10 0 1000 3000 4000 2000 30 20 10 0 5000 f = 1mhz v gs = 0v figure 3. capacitance characteristics v ds , drain-to-source voltage (v) c, capactiance (pf) 40 50 c iss c oss c ross 100 50 0 -50 i d = 30a v gs = 10v figure 4. on-resistance va riation with temperature r ds(on) , on-resistance (m ? ) 150 200 0.4 1.0 1.6 2.2 2.8 t j , junction temperature (o c ) figure 5. gate threshold variation with temperature vth, normalized gate-source threshold voltage t j , junction temperature (o c ) 0.6 100 25 0 -50 -25 50 75 125 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v ge = 10v i d = 250 a figure 6. breakdown voltage variation with temperature bvd dss , normalized drains-source breakdown t j , junction temperature (o c ) 0.85 100 25 0 -50 -25 50 75 125 0.90 0.95 1.00 1.05 1.10 1.15 1.20 i d = 250 a PS90N80
http:// www.sirectsemi.com figure 7. transconductance variation with drain current transconductance (s) i ds, drain-source current (a) 0 30 15 10 0 5 20 25 3 6 9 12 15 18 21 v gs = 5v figure 8. body diode forward voltage variation with source current i s , source-drain current (a) v ds, body diode forward voltage (v) 0 1.6 1.0 0.8 0.4 0.6 1.2 1.4 1 10 20 tj = 25o c figure 9. gate charge v gs , gate to source voltage total gate charge (nc) 0 12 6 4 0 2 8 10 14 2 4 8 10 v ds = 30v i d = 75a 6 PS90N80
http:// www.sirectsemi.com to-220ab package b d e f h h i c n j g a m l k o g d s dimensions inches mm dim min max min max note a .579 .606 14.70 15.40 b .392 .411 9.95 10.45 c .104 .116 2.65 2.95 d .248 .272 6.30 6.90 e .325 .350 8.25 8.90 f .126 .157 3.20 4.00 g .492 .551 12.50 14.00 h .096 .108 2.45 2.75 i .028 .039 0.70 1.00 j .010 .022 0.25 0.55 k .146 .157 3.70 4.00 l .167 .187 4.25 4.75 m .045 .057 1.15 1.45 n .089 .114 2.25 2.90 o .047 .055 1.20 1.40 PS90N80 sirectifier global corp., delaware, u.s.a. u.s.a.: sgc@sirectsemi.com france: ss@sirectsemi.com taiwan: se@sirectsemi.com hong kong: hk@sirectsemi.com china: st@sirectsemi.com ? thailand: th@sirectsemi.com philippines: aiac@sirectsemi.com belize: belize@sirectsemi.com
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